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CGA-6618
Product Description
Sirenza Microdevice's CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The CGA-6618 contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration.
CGA-6618Z
Pb
RoHS Compliant & Green Package
Preliminary
Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier
The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS * Now available in Lead Free, RoHS compliant per EU Directive 2002/95. This package is also manuCompliant, & Green Packaging factured with green molding compounds that contain no antimony * Excellent CSO/CTB/XMOD at trioxide nor halogenated fire retardants. +34 dBmV Output Power per Tone
1 8 7 6 5
Product Features
* Dual Devices in each SOIC-8 Package simplify Push-Pull configuration PC board layout
Amplifier Configuration
2 3 4
Applications
* CATV Head End Driver and Predriver Amplifier
* CATV Line Driver Amplifier ELECTRICAL SPECIFICATIONS
S ym bol P a ra m e te r F re q .(M H z ) 50 500 870 1000 50 250 500 50 500 870 50 500 870 500 1 0 0 -8 7 0 500 1 0 0 -8 7 0 50 500 870 M in . Ty p . 1 3 .8 1 4 .1 1 3 .4 1 3 .0 7 6 .5 7 7 .5 7 2 .0 3 8 .0 3 9 .0 4 0 .0 2 0 .0 2 1 .0 2 1 .5 1 5 .5 10 1 2 .5 9 .0 5 .3 5 .4 5 .6 81 70 63 4 .8 144 5 .1 160 35
TL = 25C ZS = ZL = 75 Ohms Push Pull Application Circuit
M ax.
U n its
G
S m a ll S i g n a l G a i n
1 2 .4 1 2 .0
1 4 .4 1 4 .0
dB
O IP 2
O u tp ut S e c o n d O rd e r Inte rc e p t P o in t To n e S p a c i ng = 1 M H z, P o u t p e r to ne = + 6 d B m O u tp ut T hi rd O rd e r In te rc e p t P o in t To n e S p a c i ng = 1 M H z, P o u t p e r to ne = + 6 d B m O u tp ut P o w e r a t 1 d B G a in C o m p re s s i o n
dBm
7 0 .0
O IP 3
dBm
3 8 .0
P1dB
dBm
1 9 .5
IR L ORL
Inp ut R e turn L o s s O u tp ut R e turn L o s s N o is e F i g ure B a lun Ins e rtio n L o s s Inc lud e d W o rs t C a s e O ve r B a n d , 7 9 C h., F la t, + 3 4 d B m V W o rs t C a s e O ve r B a n d , 7 9 C h., F la t, + 3 4 d B m V W o rs t C a s e O ve r B a n d , 7 9 C h., F la t, + 3 4 d B m V D e vi c e O p e ra ting V o lta g e D e vi c e O p e ra ting C urre n t T he rm a l R e s is ta nc e (J unc ti o n to L e a d )
Test Conditions: VS = 8 V ID = 160 mA Typ. RBIAS = 33 Ohms
dB dB
NF CSO C TB XMOD VD ID R T H (J -L )
dB 6 .6 dBc dBc dBc 5 .4 176 V mA C /W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101994 Rev J
CGA-6618 Dual GaAs HBT Amplifier
Absolute Maximum Ratings
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I DVD < (TJ - TL) / RTH, j-l
Parameter Max. Device Current (I D) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp.
Absolute Limit 240 mA 7V +20 dBm +150C -40C to +85C +150C
Typical RF Performance: VS=8V, ID=160mA @ TL=+25C, RBIAS=33 Ohms, Push-Pull Config.
Gain vs. Frequency
18 17 16 -40C +25C +85C
Gain (dB)
15 14 13 12 11 10 0 100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
|S11| (dB) vs. Frequency
0 -2 -4 -6 -40C +25C +85C
|S22| (dB) vs. Frequency
0 -2 -4 -6 -40C +25C +85C
|S11| (dB)
|S22| (dB)
-8 -10 -12 -14 -16 -18 -20 0 100 200 300 400 500 600 700 800 900 1000
-8 -10 -12 -14 -16 -18 -20 0 100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
Frequency (MHz)
75 Ohm Push Pull S-parameters are available for download at www.sirenza.com
303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com
EDS-101994 Rev J
CGA-6618 Dual GaAs HBT Amplifier
Typical RF Performance: VS=8V, ID=160mA @ TL=+25C, RBIAS=33 Ohms, Push-Pull Config.
Third Order Intercept Point vs. Frequency over Temperature
50
90
Second Order Intercept Point vs. Frequency over Temperature
45
85
40
80
IP3 (dBm)
IP2 (dBm)
-40C +25C
35
75
30
70 -40C 65 +25C +85C
25
+85C
20 0 100 200 300 400 500 600 700 800 900 1000
60 0 50 100 150 200 250 300 350 400 450 500 550
Freq. (MHz)
Second Harmonic vs. Pout and Freq. Data shown is typical at 25C
100
100
Freq. (MHz) Third Harmonic vs. Pout and Freq. Data shown is typical at 25C
90
90
80
80
IM2 (dBc)
IM3 (dBc)
70 66MHz 100MHz 50 250MHz 500MHz 40 0 1 2 3 4 5 6
70 66MHz 100MHz 50 250MHz 500MHz 40 0 1 2 3 4 5 6
60
60
Pout (dBm)
Pout (dBm) CTB/CSO/XMOD 34dBmV/Chan., Flat
100
Noise Figure vs. Frequency Over Temperature
8.0 7.0
90
6.0
80
5.0
NF(dB)
dBc
-40C +25C +85
4.0 3.0 2.0 1.0 0.0 0 100 200 300 400 500 600 700 800 900 1000
70
60 Xmod CSO+ 40 0 50 100 150 200 250 300 350 400 450 500 550 600 CTB CSO-
50
Freq. (MHz)
Freq. (MHz)
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-101994 Rev J
CGA-6618 Dual GaAs HBT Amplifier
CSO/CTB/XMOD Performance:
VS=8V, ID=150mA @ TL=+25C, RBIAS=39 Ohms, Push-Pull Config, 79 Ch. Flat Analog, No Digital Channels.
Push-Pull CGA-6618 CTB vs. Pout and Freq.
100 32dBmV 90 36dBmV 40dBmV 80 34dBmV 38dBmV 42dBmV 80 90 100
Push-Pull CGA-6618 XMOD vs. Pout and Freq.
32dBmV 36dBmV 40dBmV 34dBmV 38dBmV 42dBmV
dBc
70
dBc
0 100 200 300 400 500 600
70
60
60
50
50
40
40
Frequency (MHz)
0
100
200
300
400
500
600
Frequency (MHz)
Push-Pull CGA-6618 CSO- vs. Pout and Freq.
100 100
Push-Pull CGA-6618 CSO+ vs. Pout and Freq.
90
90
80
80
dBc
70
dBc
70
60
60 32dBmV 50 36dBmV 40dBmV 40 0 100 200 300 400 500 600 0 100 200 300 400 500 600 34dBmV 38dBmV 42dBmV
32dBmV 50 36dBmV 40dBmV 40
34dBmV 38dBmV 42dBmV
Frequency (MHz)
Frequency (MHz)
Note: CSO measurements > 85 dBc can be limited by system noise.
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com
EDS-101994 Rev J
CGA-6618 Dual GaAs HBT Amplifier
Typical RF Performance - Single Ended - 50 Ohm System
VS=8V, ID=80mA (one amp biased), TL=+25C, RBIAS=33 Ohms
Gain & Isolation vs. Frequency
18 16 14 12
0 -4 -8
|S11| & |S22| vs. Frequency
0 -5 -10
Isolation (dB)
-12 -16 -20 -24
Gain (dB) Isolation (dB) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gain (dB)
-15
dB
10 8 6 4 2 0
-20 -25 -30 -35 -40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 |S11| |S22|
-28 -32 -36
Frequency (GHz)
Frequency (GHz)
Typical RF Performance - Single Ended - 37.5 Ohm System
VS=8V, ID=80mA (one amp biased), TL=+25C, RBIAS=33 Ohms
Gain & Isolation vs. Frequency
18 16 14 12 0 -4 -8 0 -5 -10
|S11| & |S22| vs. Frequency
Isolation (dB)
-12 -16 -20 -24 Gain (dB) Isolation (dB) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -28 -32 -36
-15
Gain (dB)
dB
10 8 6 4 2 0
-20 -25 -30 -35 -40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 |S11| |S22|
Frequency (GHz)
Frequency (GHz)
50 Ohm and 37.5 Ohm Single Ended S-parameter files are available for download at www.sirenza.com
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com
EDS-101994 Rev J
CGA-6618 Dual GaAs HBT Amplifier
Pin #
1 2,3,6,7 4
Function
RF IN Device 1 Ground RF IN Device 2
Description
RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the schematic. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Same as pin 1
2 1
Device Pin Out
8
7
5
RF output and bias pin. Bias should be supplied to this pin through an external series RF OUT / Vcc resistor and RF choke inductor. Because DC biasing is present on this pin, a DC Device 2 blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. RF OUT / Vcc Same as pin 5 Device 1 Ground Exposed area on the bottom side of the package must be soldered to the ground plane of the board for proper thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern on page 5.
3
6
8
4
5
EPAD
Basic Application Schematic 50-870 MHz
Vs
RBIAS 1F Tant. 0.01F 1000pF 68pF
Evaluation Board Layout 50-870 MHz
Rbias
1uF Tant. RF INPUT .01uF 1000pF 68pF Balun ETC1-1-13 220nH 1000pF 1000pF Balun ETC1-1-13 RF OUTPUT
220 nH
1 8 Amp 1
Macom ETC1-1-13
1000 pF
2,3 6,7
1000 pF
1000pF 220nH
1000pF 68pF 1000pF .01uF
1000 pF
4 Amp 2 5
1000 pF
Macom ETC1-1-13
1uF Tant.
CGA-6618 SOIC-08
220 nH
Rbias
ECB-101611 Rev A ESOP-8 Push-Pull Eval Board
1F Tant.
0.01F
1000pF
68pF
PCB Recommendations
RBIAS
Vs
R ecommended B ias R esistor Values for ID =150mA R B IAS =2 ( V S -V D ) / ID S upply Voltage(V S ) R BIAS 8V 33 9V 47 12 V 82 15 V 120
1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides.
Note: R B IA S provides D C bias stability over temperature.
Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed.
Part Identification Marking Part Number Ordering Information
CGA-6618
CGA-6618Z
Part Number
Reel Size
Devices/Reel
CGA-6618 CGA-6618Z
7" 7"
500 500
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com
EDS-101994 Rev J
CGA-6618 Dual GaAs HBT Amplifier 5 - 100 MHz Application Circuit: VS=8V, ID=160mA @ TL=+25C, Push-Pull Config.
G a in v s . F re q u e n c y
16 0
R e tu rn L o s s v s . F re q u e n c y
-5 14
|S 11 | and |S 22 | (dB)
-10
|S 22 |
|S 21 | (dB)
12
-15
|S 11 |
10
-20
8
-25
6 0 10 20 30 40 50 60 70 80 90 100
-30 0 10 20 30 40 50 60 70 80 90 100
F requency (M Hz)
F reque ncy (M Hz)
P1dB and IP3 vs. Frequency
22 40 8 7 21 39 6 20 38
Noise Figure vs. Frequency
P1dB (dBm)
IP3 (dBm)
5
19
37
NF (dB)
4 3 2
18 P1dB 17 IP3 16 0 10 20 30 40 50 60 70 80 90 100 110
36
35 1 34 0 0 10 20 30 40 50 60 70 80 90 100 110
Frequency (M Hz)
Frequency (MHz)
5-100 MHz Application Schematic
Vs
5-100 MHz Evaluation Board Layout
Rbias
RBIAS 1F Tant. 0.01F 1000pF 68pF
1uF Tant. RF INPUT
10
1 8 Amp 1
RF OUTPUT .01uF 1000pF 68pF Balun ETC1-1T 0.01uF 10uH 0.01uF Balun ETC1-1T
Macom ETC1-1T
0.01 F
2,3 6,7
0.01 F
0.01 F
4 Amp 2 5
0.01 F
Macom ETC1-1T
0.01uF 10uH
0.01uF 68pF 1000pF .01uF
CGA-6618 SOIC-08
10
1uF Tant.
1F Tant. 0.01F 1000pF 68pF
ECB-101611 Rev A ESOP-8 Push-Pull Eval Board
Rbias
RBIAS
Vs
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC 7
http://www.sirenza.com
EDS-101994 Rev J
CGA-6618 Dual GaAs HBT Amplifier
PCB Pad Layout
Dimensions in inches [millimeters] Sized for 31 mil thick FR-4
Nominal Package Dimensions & Package Marking
Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances.
TOP VIEW
8 7 6 5
BOTTOM VIEW
Lot Code CGA6618
1 2 3 4
.155 [3.937]
.236 [5.994]
.112 [2.85]
.088 [2.25]
EXPOSED PAD .061 [1.549] .194 [4.93]
.050 [1.27]
.016 [.406] .061 [1.549]
.008 [.203]
.058 [1.473]
.013 [.33] x 45
.008
DETAIL A
PARTING LINE
.194 [4.928] .003 [.076]
SEATING PLANE
SEE DETAIL A
.155 [3.937]
.025 5
SIDE VIEW
END VIEW
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC 8
http://www.sirenza.com
EDS-101994 Rev J

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